Abstract: This paper presents a detailed analysis of the multifrequency capacitance–voltage and conductance–voltage data of $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{n ...
Abstract: GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact ...
一些您可能无法访问的结果已被隐去。
显示无法访问的结果