本文提出了一种优化的ANPC拓扑结构。该拓扑结构支持最新的1200-V SiC T-MOSFET与IGBT技术优化组合，实现成本效益。市场上将推出一款采用全集成ANPC拓扑结构的新型功率模块，适用于高度紧凑型、高效率1500-V并网逆变器。新开发的Easy3B功率模块在48kHz频率条件下 ...

我国海上风能资源丰富，可开发风能资源约是陆上资源的3倍。随着“3060”碳目标的确立和逐步落地，海上风电必将迎来更加广阔的发展空间。 与陆上风电相比，海上风电的生存环境更恶劣、可达性更差，所以风机由于故障停机导致的交通成本、运维成本和停机 ...

The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...

Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...

ISELIN, NJ--(Marketwired - Aug 18, 2016) - TDK Corporation today announced a new EPCOS DC link capacitor that has been specifically designed for the HybridPACK™ 1-DC6 Insulated Gate Bipolar Transistor ...