SANTA CLARA, Calif., April 21, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced innovations that help customers continue 2D scaling with EUV and detailed the industry’s broadest ...

A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...

The chipmaker unveils an experimental transistor with three gates, in a continued effort to find ways to increase performance while conserving electricity. Michael Kanellos is editor at large at CNET ...

Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...